onsemi NJVMJD45H11G

onsemi · Transistors (BJTs) · MPN NJVMJD45H11G

No reviews yet — be the first to review onsemi NJVMJD45H11G.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain40
Pd - Power Dissipation1.75W
typePNP
Current - Collector(Ic)8A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

80V 40 PNP 8A DPAK Single Bipolar Transistors RoHS

Related Transistors (BJTs)