onsemi NJVMJD45H11D3T4G

onsemi · Transistors (BJTs) · MPN NJVMJD45H11D3T4G

No reviews yet — be the first to review onsemi NJVMJD45H11D3T4G.

Specifications

Current - Collector Cutoff-
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain40
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

80V 40 PNP 8A DPAK Single Bipolar Transistors RoHS

Related Transistors (BJTs)