onsemi · Transistors (BJTs) · MPN NJVMJD44E3T4G
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 80V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 1.75W |
| type | NPN |
| Current - Collector(Ic) | 10A |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2V |
80V 1000 NPN 10A DPAK Single Bipolar Transistors RoHS