onsemi NJVMJD42CT4

onsemi · Transistors (BJTs) · MPN NJVMJD42CT4

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain30
Pd - Power Dissipation1.75W
typePNP
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+150℃

Technical details

100V 30 PNP 6A DPAK Single Bipolar Transistors RoHS

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