onsemi NJVMJD31CT4G-VF01

onsemi · Transistors (BJTs) · MPN NJVMJD31CT4G-VF01

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain10
Pd - Power Dissipation15W
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V
Operating Temperature-65℃~+150℃

Technical details

40V 10 NPN 3A DPAK Single Bipolar Transistors RoHS

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