onsemi NJVMJD148T4G

onsemi · Transistors (BJTs) · MPN NJVMJD148T4G

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain85
Pd - Power Dissipation1.75W
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

45V 85 NPN 4A DPAK Single Bipolar Transistors RoHS

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