onsemi NJVMJB44H11T4G

onsemi · Transistors (BJTs) · MPN NJVMJB44H11T4G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain60
Pd - Power Dissipation50W
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

80V 60 NPN 10A D2PAK Single Bipolar Transistors RoHS

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