onsemi NJL3281DG

onsemi · Transistors (BJTs) · MPN NJL3281DG

No reviews yet — be the first to review onsemi NJL3281DG.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO260V
DC Current Gain75
Pd - Power Dissipation200W
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))3V

Technical details

260V 75 NPN 15A TO-264-5 Single Bipolar Transistors RoHS

Related Transistors (BJTs)