onsemi NCV1413BDR2G

onsemi · Transistors (BJTs) · MPN NCV1413BDR2G

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Specifications

Output Leakage Current(Icex)50uA
Input Capacitiance(Ci)15pF
number of channelsSeven channels
Input Current(on)1.35mA
Vce Saturation(VCE(sat))1.1V
typeBJT
Voltage - Input(Max)30V
Voltage - Forward(Vf)1.5V
Input Current(off)100uA
Current - Collector(Ic)500mA
Operating Temperature-40℃~+125℃

Technical details

Seven channels BJT 500mA SOIC-16 Bipolar Transistor Arrays RoHS

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