onsemi MUN5334DW1T1G

onsemi · Transistors (BJTs) · MPN MUN5334DW1T1G

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Specifications

DC Current Gain80
Output Voltage(VO(on))200mV
Input Resistor22kΩ
Resistor Ratio0.47
Number-
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)-
Voltage - Input(Max)(VI(off))900mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

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