onsemi · Transistors (BJTs) · MPN MUN5330DW1T1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 3 |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN+PNP |
| Input Resistor | 1kΩ |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 187mW |
| Voltage - Input(Max)(VI(off)) | 1.2V |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 187mW Surface Mount SOT-363