onsemi MUN5232T1G

onsemi · Transistors (BJTs) · MPN MUN5232T1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain15
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Resistor Ratio1
Pd - Power Dissipation202mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 202mW Surface Mount SC-70-3

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