onsemi MUN5232DW1T1G

onsemi · Transistors (BJTs) · MPN MUN5232DW1T1G

No reviews yet — be the first to review onsemi MUN5232DW1T1G.

Specifications

Current - Collector Cutoff100nA
DC Current Gain15
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Resistor Ratio1
Pd - Power Dissipation187mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)2.4V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363

Related Transistors (BJTs)