onsemi MUN5230T1G

onsemi · Transistors (BJTs) · MPN MUN5230T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain3
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Number-
Pd - Power Dissipation202mW
Input Voltage (VI(on)@Ic,Vce)2V@20mA,0.3V
Voltage - Input(Max)(VI(off))500mV@0.1mA,5V

Technical details

50V 3 100mA 202mW SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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