onsemi · Transistors (BJTs) · MPN MUN5216DW1T1G
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| DC Current Gain | 350 |
|---|---|
| Number | - |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 900mV@10mA,0.2V |
| Voltage - Input(Max)(VI(off)) | 600mV@100uA,5.0V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
350 250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS