onsemi MUN5212T1G

onsemi · Transistors (BJTs) · MPN MUN5212T1G

No reviews yet — be the first to review onsemi MUN5212T1G.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain60
Current - Collector(Ic)100mA
Input Resistor22kΩ
Number1 NPN (Pre-Biased)
Pd - Power Dissipation202mW

Technical details

50V 60 100mA 1 NPN (Pre-Biased) 202mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)