onsemi · Transistors (BJTs) · MPN MUN5212DW1T1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 385mW |
| Voltage - Input(Max)(VI(off)) | 1.2V@100uA,5.0V |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
100 2 NPN (Pre-Biased) 385mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS