onsemi MUN5211T1

onsemi · Transistors (BJTs) · MPN MUN5211T1

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain35
Current - Collector(Ic)100mA
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
Pd - Power Dissipation310mW

Technical details

50V 35 100mA 1 NPN (Pre-Biased) 310mW SC-70-3 Single, Pre-Biased Bipolar Transistors

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