onsemi MUN5137T1G

onsemi · Transistors (BJTs) · MPN MUN5137T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Current - Collector(Ic)100mA
Input Resistor47kΩ
Number-
Pd - Power Dissipation310mW
Input Voltage (VI(on)@Ic,Vce)4V@2mA,0.3V

Technical details

50V 80 100mA 310mW SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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