onsemi MUN5137DW1T1G

onsemi · Transistors (BJTs) · MPN MUN5137DW1T1G

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Specifications

DC Current Gain140
Input Resistor61.1kΩ
Pd - Power Dissipation250mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

140 250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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