onsemi · Transistors (BJTs) · MPN MUN5116T1G
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 160 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 6.1kΩ |
| Number | - |
| Pd - Power Dissipation | 310mW |
50V 160 100mA 310mW SC-70 Single, Pre-Biased Bipolar Transistors RoHS