onsemi MUN5114T1G

onsemi · Transistors (BJTs) · MPN MUN5114T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain140
Current - Collector(Ic)100mA
Input Resistor10kΩ
Number-
Pd - Power Dissipation310mW

Technical details

50V 140 100mA 310mW SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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