onsemi MSD42WT1G

onsemi · Transistors (BJTs) · MPN MSD42WT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain25
Pd - Power Dissipation450mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 300V 150mA 450mW Surface Mount SC-70

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