onsemi MSD1819A-RT1G

onsemi · Transistors (BJTs) · MPN MSD1819A-RT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
DC Current Gain210
Pd - Power Dissipation150mW
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV

Technical details

50V 210 NPN 100mA SC-70-3 Single Bipolar Transistors RoHS

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