onsemi MSB1218A-RT1G

onsemi · Transistors (BJTs) · MPN MSB1218A-RT1G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO7V
DC Current Gain210
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

45V 210 1 PNP PNP 100mA SC-70 Single Bipolar Transistors RoHS

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