onsemi MPSH17

onsemi · Transistors (BJTs) · MPN MPSH17

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO15V
DC Current Gain25
Pd - Power Dissipation350mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)-
Transition frequency(fT)800MHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number1 NPN

Technical details

15V 25 350mW NPN TO-92-3 Bipolar RF Transistors RoHS

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