onsemi · Transistors (BJTs) · MPN MPSA06
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 4V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 625mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 250mV |
Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 625mW Through Hole TO-92-3L