onsemi MMUN2130LT1G

onsemi · Transistors (BJTs) · MPN MMUN2130LT1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain3
Vce Saturation(VCE(sat))250mV
Current - Collector(Ic)100mA
Input Resistor1kΩ
typePNP
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation246mW
Input Voltage (VI(on)@Ic,Vce)2V
Voltage - Input(Max)(VI(off))500mV

Technical details

50V 3 100mA PNP 1 PNP Pre-Biased 246mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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