onsemi MMPQ3906

onsemi · Transistors (BJTs) · MPN MMPQ3906

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Specifications

Current - Collector Cutoff50nA
DC Current Gain300
Pd - Power Dissipation1W
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)200MHz
Vce Saturation(VCE(sat))400mV
typePNP
Number4 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 200MHz 1000mW Surface Mount SOIC-16

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