onsemi MMBTH81

onsemi · Transistors (BJTs) · MPN MMBTH81

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO20V
DC Current Gain60
Pd - Power Dissipation225mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)600MHz
Vce Saturation(VCE(sat))500mV
typePNP
Number1 PNP

Technical details

Bipolar (BJT) Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23

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