onsemi MMBTH10RG

onsemi · Transistors (BJTs) · MPN MMBTH10RG

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Specifications

Collector - Emitter Voltage VCEO40V
DC Current Gain50
Pd - Power Dissipation225mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)450MHz
typeNPN

Technical details

40V 50 225mW 50mA NPN SOT-23-3 Bipolar RF Transistors RoHS

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