onsemi MMBTA92LT1G

onsemi · Transistors (BJTs) · MPN MMBTA92LT1G

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Specifications

Current - Collector Cutoff250nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 225mW Surface Mount SOT-23

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