onsemi MMBTA64LT3G

onsemi · Transistors (BJTs) · MPN MMBTA64LT3G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain20000@5V,100mA
Pd - Power Dissipation300mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.5V@100mA,100uA

Technical details

30V 20000@5V,100mA PNP 100mA SOT-23 Single Bipolar Transistors RoHS

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