onsemi · Transistors (BJTs) · MPN MMBT918LT1G
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 50nA |
| Collector - Emitter Voltage VCEO | 15V |
| DC Current Gain | 20 |
| Pd - Power Dissipation | 225mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 50mA |
| Transition frequency(fT) | 600MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23