onsemi MMBT918LT1G

onsemi · Transistors (BJTs) · MPN MMBT918LT1G

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO15V
DC Current Gain20
Pd - Power Dissipation225mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)600MHz
Vce Saturation(VCE(sat))400mV
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23

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