onsemi MMBT6521LT1G

onsemi · Transistors (BJTs) · MPN MMBT6521LT1G

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO4V
DC Current Gain300
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

25V 300 NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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