onsemi · Transistors (BJTs) · MPN MMBT6521LT1G
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| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 4V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 300mW |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
25V 300 NPN 100mA SOT-23 Single Bipolar Transistors RoHS