onsemi · Transistors (BJTs) · MPN MMBT6520LT1G
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 350V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 20 |
| Pd - Power Dissipation | 225mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 350V 100mA 200MHz 225mW Surface Mount SOT-23