onsemi MMBT6428LT1G

onsemi · Transistors (BJTs) · MPN MMBT6428LT1G

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)700MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain250
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 50V 200mA 700MHz 300mW Surface Mount SOT-23

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