onsemi MMBT5401WT1G

onsemi · Transistors (BJTs) · MPN MMBT5401WT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain60
Pd - Power Dissipation400mW
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

150V 60 PNP 500mA SC-70 Single Bipolar Transistors RoHS

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