onsemi MMBT5088LT1G

onsemi · Transistors (BJTs) · MPN MMBT5088LT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO4.5V
DC Current Gain300
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 225mW Surface Mount SOT-23

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