onsemi MMBT5087LT1G

onsemi · Transistors (BJTs) · MPN MMBT5087LT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO3V
DC Current Gain250
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)50mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 225mW Surface Mount SOT-23

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