onsemi MMBT4126LT1G

onsemi · Transistors (BJTs) · MPN MMBT4126LT1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO4V
DC Current Gain300
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 25V 200mA 225mW Surface Mount SOT-23

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