onsemi · Transistors (BJTs) · MPN MMBT3416LT3G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 4V |
| DC Current Gain | 75 |
| Pd - Power Dissipation | 225mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 300mV |
Bipolar (BJT) Transistor NPN 40V 100mA 225mW Surface Mount SOT-23