onsemi MMBT2369ALT1G

onsemi · Transistors (BJTs) · MPN MMBT2369ALT1G

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Specifications

Current - Collector Cutoff400nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO15V
Emitter-Base Voltage VEBO4.5V
DC Current Gain120
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 15V 200mA 300mW Surface Mount SOT-23

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