onsemi MJW21195G

onsemi · Transistors (BJTs) · MPN MJW21195G

No reviews yet — be the first to review onsemi MJW21195G.

Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation200W
Number1 PNP
typePNP
Current - Collector(Ic)16A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-247

Related Transistors (BJTs)