onsemi · Transistors (BJTs) · MPN MJL4281AG
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| Current - Collector Cutoff | 50uA |
|---|---|
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 350V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 50 |
| Pd - Power Dissipation | 230W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 15A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN+PNP 350V 15A 4MHz 230W Through Hole TO-264-3