onsemi MJL21193G

onsemi · Transistors (BJTs) · MPN MJL21193G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO250V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation200W
Number1 PNP
typePNP
Current - Collector(Ic)16A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.4V

Technical details

Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-264-3

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