onsemi · Transistors (BJTs) · MPN MJH6287G
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| Vbe Saturation(VBE(sat)) | 4V |
|---|---|
| Current - Collector Cutoff | - |
| Vbe On(VBE(on)) | 2.8V |
| Transition frequency(fT) | 4MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 750 |
| Pd - Power Dissipation | 160W |
| type | PNP |
| Current - Collector(Ic) | 20A |
| Vce Saturation(VCE(sat)) | 3V@20A,200mA |
| Operating Temperature | -65℃~+150℃@(Tj) |
100V 750 PNP 20A TO-247 Single Bipolar Transistors RoHS