onsemi MJH6287G

onsemi · Transistors (BJTs) · MPN MJH6287G

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Specifications

Vbe Saturation(VBE(sat))4V
Current - Collector Cutoff-
Vbe On(VBE(on))2.8V
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain750
Pd - Power Dissipation160W
typePNP
Current - Collector(Ic)20A
Vce Saturation(VCE(sat))3V@20A,200mA
Operating Temperature-65℃~+150℃@(Tj)

Technical details

100V 750 PNP 20A TO-247 Single Bipolar Transistors RoHS

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