onsemi MJH11019G

onsemi · Transistors (BJTs) · MPN MJH11019G

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO200V
DC Current Gain400@5V,10A
Pd - Power Dissipation150W
typePNP
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))4V@15A,150mA
Operating Temperature-65℃~+150℃@(Tj)

Technical details

200V 400@5V,10A PNP 15A TO-247-3 Single Bipolar Transistors RoHS

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