onsemi MJF31CG

onsemi · Transistors (BJTs) · MPN MJF31CG

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Specifications

Current - Collector Cutoff300uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation28W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 28W Through Hole TO-220FPAB-3

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