onsemi MJF3055G

onsemi · Transistors (BJTs) · MPN MJF3055G

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO90V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation30W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor NPN 90V 10A 2MHz 30W Through Hole TO-220FP

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